Abstract

Next-generation silicon carbide (SiC) power semiconductors are expected to offer size reductions and increased efficiency. Optimized design is necessary for the power circuits employing these semiconductors in order to exploit their performance potential. The identification of each circuit element related to transient response during high-speed switching, a characteristic of SiC power semiconductors, and the correlation of circuit simulation models with the results of actual measurements, made it possible to obtain voltage and current waveforms to within a 4% level of error.Using this circuit simulation technology, the most important circuit elements to power circuit design were identified. The employment of optimized values in sections of the circuit in which parasitic impedance affected efficiency and electromagnetic interference (EMI) performance was shown to reduce switching loss and noise.

References

1. (1) Shinohe, T.: SiC Power Devices, Toshiba Review, Vol. 59, No. 2, p. 49-53 (2004)
2. (2) Power electronics handbook editorial board: Power electronics handbook, Ohmsha, 288 p. (2010)

Author (organization or company)

• Tomoyo EGOSHI（Automobile R&D Center）
• Sadao SHINOHARA（Automobile R&D Center）

Publication Information

Article of Honda R&D Technical Review Vol.24 No.1 (136 - 142)

PDF

Citation Information